Linearly Scaling Molecular Dynamic Modeling To Simulate Picosecond Laser Ablation of a Silicon Carbide Crystal

Interface failure behavior and mechanisms of 4H-SiC wafer with alloy backside layer caused by different dicing technologies

Brittle-ductile transition mechanism during grinding 4H-SiC wafer considering laminated structure

Modulation of ultrafast laser-induced modified structure inside silicon carbide for thin wafer dicing